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The UMD6NFHATR is a dual digital transistor from ROHM Semiconductor, integrating an NPN and a PNP bipolar junction transistor with built-in bias resistors in a single SOT-363 package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a gain-bandwidth product of 250 MHz and a power dissipation rating of 150 mW. It is qualified under the AEC-Q101 standard for automotive applications and supports surface mount installation with a maximum operating temperature of +150 C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required electrical specifications and automotive qualification status before finalizing procurement orders.
Select this component when a compact solution requires both NPN and PNP switching capabilities within a single footprint. Ensure the design accounts for the 150 mW power dissipation limit and verify that the 50 V voltage rating exceeds the maximum circuit operating conditions.
This part belongs to ROHM's UMD series of pre-biased transistors, designed to simplify digital circuit layouts by replacing discrete resistor-transistor networks. The UMD6 variant specifically pairs NPN and PNP structures, offering a balanced solution for push-pull or differential signaling applications in space-constrained environments.
Direct pin-compatible substitutes may include other dual digital transistors in the SOT-363 package with matching NPN/PNP configurations and similar voltage/current ratings. Verify electrical parameters and package dimensions before substitution.