UMD6NFHATR

UMD6NFHATR

$0.37
  • Description:PNP+NPN DIGITAL TRANSISTOR (WITH
  • Series:-

SKU:8eb34350446d Category: Brand:

  
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Product Detailed Parameters

  • Description:PNP+NPN DIGITAL TRANSISTOR (WITH
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMD6NFHATR

Overview

The UMD6NFHATR is a dual digital transistor from ROHM Semiconductor, integrating an NPN and a PNP bipolar junction transistor with built-in bias resistors in a single SOT-363 package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device features a gain-bandwidth product of 250 MHz and a power dissipation rating of 150 mW. It is qualified under the AEC-Q101 standard for automotive applications and supports surface mount installation with a maximum operating temperature of +150 C.

Feature Summary

  • Integrates complementary NPN and PNP transistors with internal bias resistors to reduce component count and board space.
  • AEC-Q101 qualified for enhanced reliability in automotive electronic systems.
  • Utilizes a compact SOT-363 surface-mount package suitable for high-density circuit designs.

Applications

  • Automotive infotainment and control unit logic switching
  • General-purpose digital buffering and level shifting in embedded systems
  • Driver circuits for low-power loads in industrial equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the requested variant matches the required electrical specifications and automotive qualification status before finalizing procurement orders.

Selection Notes

Select this component when a compact solution requires both NPN and PNP switching capabilities within a single footprint. Ensure the design accounts for the 150 mW power dissipation limit and verify that the 50 V voltage rating exceeds the maximum circuit operating conditions.

Part Context

This part belongs to ROHM's UMD series of pre-biased transistors, designed to simplify digital circuit layouts by replacing discrete resistor-transistor networks. The UMD6 variant specifically pairs NPN and PNP structures, offering a balanced solution for push-pull or differential signaling applications in space-constrained environments.

Replacement Considerations

Direct pin-compatible substitutes may include other dual digital transistors in the SOT-363 package with matching NPN/PNP configurations and similar voltage/current ratings. Verify electrical parameters and package dimensions before substitution.

UMD6NFHATRUMD6NFHATR
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