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The UMD6NTR is a digital transistor array manufactured by ROHM Semiconductor, housed in a compact UMT-6 surface-mount package. It integrates one NPN and one PNP pre-biased transistor within a single component. The device supports a maximum collector-emitter voltage of 50V for both polarities and provides a continuous collector current capability of 100mA. Each internal transistor features an input resistance of 4.7kΩ. The unit offers a power dissipation rating of 150mW and operates reliably across a temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to ensure correct packaging configuration. Confirm that the intended application environment remains within the specified thermal limits. Check for any automotive qualification requirements if deploying in vehicle systems, as standard versions may differ from qualified variants.
Select this component when a compact solution requires simultaneous NPN and PNP switching capabilities. The integrated 4.7kΩ input resistors reduce external component count compared to discrete transistor pairs. Ensure the required current handling does not exceed the 100mA continuous limit under worst-case thermal conditions.
This part belongs to the UMD series of complex transistors designed for high-density mounting. It serves as a functional equivalent to combinations of discrete DTA and DTC series devices, offering a streamlined alternative for designers seeking to minimize footprint while maintaining robust switching characteristics in small form factors.
The UMD6N is listed as a similar level replacement with the same pinout and package. Verify electrical parameter compatibility before substitution. Other equivalents include DTA143T and DTC143T for individual sections, though these require separate components for dual functionality.