UMD9NFHATR

UMD9NFHATR

$0.37
  • Description:PNP+NPN DIGITAL TRANSISTOR (WITH
  • Series:-

SKU:3501eb87890e Category: Brand:

  
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Product Detailed Parameters

  • Description:PNP+NPN DIGITAL TRANSISTOR (WITH
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMD9NFHATR

Overview

The UMD9NFHATR is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bias resistor built-in transistor within a single SOT-363-6 surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA. The device features a power dissipation rating of 150 mW and a gain-bandwidth product of 250 MHz. It is qualified under the AEC-Q101 automotive standard and functions reliably at temperatures up to +150°C.

Feature Summary

  • Integrates complementary NPN and PNP transistors with built-in bias resistors in a compact six-terminal package.
  • Automotive-grade reliability certified by AEC-Q101 qualification standards for harsh environment operation.
  • Designed for high-speed switching applications with a 250 MHz gain-bandwidth product.

Applications

  • Inverter drive circuits requiring complementary switching pairs
  • Logic level shifting between different voltage domains
  • General-purpose switching in automotive electronic control units

Procurement Notes

Verify the specific suffix 'ATR' against the manufacturer's official documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the component meets the required AEC-Q101 grade for your target application. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing procurement orders.

Selection Notes

Select this component when a compact solution for both NPN and PNP switching is required in a single footprint. The integrated bias resistors simplify circuit design by reducing external component count. Verify that the 50V voltage rating and 100mA current capacity align with the load requirements of the specific switching application.

Part Context

This part belongs to ROHM's UMD series of complex digital transistors. It serves as a dual-transistor alternative to discrete BJT pairs, offering space savings on printed circuit boards. The series is widely used in consumer electronics and automotive systems where small form factors and reliable switching performance are critical design constraints.

Replacement Considerations

Publicly confirmed substitute part numbers for UMD9NFHATR were not found in the provided source material. Designers should consult the manufacturer's official replacement guide or equivalent cross-reference lists for verified alternatives.

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