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The UMD9NFHATR is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bias resistor built-in transistor within a single SOT-363-6 surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA. The device features a power dissipation rating of 150 mW and a gain-bandwidth product of 250 MHz. It is qualified under the AEC-Q101 automotive standard and functions reliably at temperatures up to +150°C.
Verify the specific suffix 'ATR' against the manufacturer's official documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure the component meets the required AEC-Q101 grade for your target application. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing procurement orders.
Select this component when a compact solution for both NPN and PNP switching is required in a single footprint. The integrated bias resistors simplify circuit design by reducing external component count. Verify that the 50V voltage rating and 100mA current capacity align with the load requirements of the specific switching application.
This part belongs to ROHM's UMD series of complex digital transistors. It serves as a dual-transistor alternative to discrete BJT pairs, offering space savings on printed circuit boards. The series is widely used in consumer electronics and automotive systems where small form factors and reliable switching performance are critical design constraints.
Publicly confirmed substitute part numbers for UMD9NFHATR were not found in the provided source material. Designers should consult the manufacturer's official replacement guide or equivalent cross-reference lists for verified alternatives.