UMD9NTR

Overview

The UMD9NTR is a dual digital transistor from ROHM Semiconductor, integrating one NPN and one PNP bias resistor built-in transistor within a single SOT-363 (UMT6) surface-mount package. This configuration provides a typical input resistance of 2.2 kOhms for both transistors with a typical resistance ratio of 21. The device supports a maximum operating frequency of 250 MHz and handles a continuous collector current of 100 mA. It features a collector-emitter voltage (VCEO) of 50 V and an emitter-base voltage (VEBO) of 5 V. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.

Feature Summary

• Integrates complementary NPN and PNP transistors with built-in base resistors in a compact six-pin surface-mount package.
• Designed for high-speed switching applications with a maximum operating frequency of 250 MHz.
• Simplifies circuit design by reducing component count and board space requirements through dual-transistor integration.

Applications

• General-purpose logic level shifting and buffering in digital circuits.
• Driver stages for small-signal switching applications requiring complementary outputs.
• Interface circuits between microcontrollers and peripheral devices.

Procurement Notes

Verify the specific suffix 'NTR' to confirm the reel packaging format and tape-and-reel quantity specifications. Ensure compatibility with standard SMT assembly processes for the SOT-363 footprint. Cross-reference the manufacturer's latest datasheet for any updates on RoHS compliance status or recommended soldering profiles prior to procurement.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint. The 2.2 kOhm input resistance suits standard logic families. Verify that the 50 V collector-emitter voltage rating meets the circuit's supply requirements. Consider the 150 mW power dissipation limit relative to the expected thermal environment and duty cycle of the application.

Part Context

The UMD9NTR belongs to ROHM's UMD series of complex digital transistors. These components are designed to replace multiple discrete transistors and resistors, offering a standardized solution for signal processing tasks. The series typically includes various resistance values and configurations to accommodate different logic levels and drive requirements across consumer and industrial electronics.

Replacement Considerations

Potential substitutes include other dual digital transistors in SOT-363 packages with matching NPN/PNP polarity and similar 2.2 kOhm input resistance. Verify pinout compatibility and electrical parameters such as VCEO and hFE before substitution. Check if alternative manufacturers offer equivalent parts under different naming conventions.