UMF21NTR

UMF21NTR

$0.46
  • Description:TRANS NPN PREBIAS/PNP 0.15W UMT6
  • Series:-

SKU:4aa3293cbc86 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/PNP 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN Pre-Biased, 1 PNP
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 12V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz, 260MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMF21NTR

Overview

The UMF21NTR is a dual transistor array manufactured by ROHM Semiconductor, housed in a UMT6 surface-mount package. It integrates one PNP bipolar junction transistor (Tr1) and one NPN digital transistor with built-in biasing resistors (DTr2). The PNP section provides a collector current of -500 mA and a transition frequency of 260 MHz. The NPN digital section features an input resistance of 10 kΩ, a DC current gain of 30, and a maximum supply voltage of 50 V. Total power dissipation is rated at 150 mW.

Feature Summary

  • Combines a high-current PNP BJT and an NPN digital transistor within a single compact footprint to reduce mounting area and cost.
  • Integrates internal biasing resistors for the NPN element to simplify circuit design and minimize external component count.
  • Utilizes a silicon epitaxial planar structure for reliable performance in standard electronic applications.

Applications

  • Power management circuits
  • Power switching applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details such as reel or tape quantity. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement specifications.

Selection Notes

Select this component when space-constrained designs require both a high-current PNP switch and a logic-compatible NPN driver. Ensure the total power dissipation does not exceed 150 mW under operating conditions.

Part Context

This device belongs to the F21 series of dual transistors from ROHM. It serves as a functional replacement for discrete combinations of parts like the 2SA2018 and DTC114E, consolidating their functions into one EMT6 or UMT6 package.

Replacement Considerations

Direct equivalent replacements include the EMF21, which shares identical electrical characteristics but utilizes an EMT6 package instead of the UMT6 form factor.

FAQ

What are the internal resistor values for the NPN digital transistor?

The NPN digital transistor (DTr2) includes built-in resistors R1 and R2, both specified at 10 kΩ.

What is the maximum collector current for the PNP transistor?

The PNP transistor (Tr1) supports a maximum continuous collector current of -500 mA.

Is this component suitable for automotive applications?

No, the datasheet specifies that these products are designed for ordinary electronic equipment and are not recommended for automotive use without prior consultation.

UMF21NTRUMF21NTR
$0.46
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