UMF23NTR

Overview

The UMF23NTR is a dual digital transistor from ROHM Semiconductor, integrating an NPN bipolar junction transistor (Tr1) and a built-in diode transistor (DTr2) within a single UMT6 surface-mount package. The Tr1 section provides a collector-emitter breakdown voltage of -50 V and a continuous collector current of -150 mA with a transition frequency up to 140 MHz. The DTr2 section features an input resistance of 10 kΩ, a resistance ratio of 1.0, and supports an output current of 50 mA. Total power dissipation is rated at 150 mW.

Feature Summary

• Integrates a discrete NPN transistor and a built-in diode transistor into one compact package for space-saving designs.
• Includes internal base resistors to simplify circuit design and reduce external component count.
• Designed specifically for power management applications requiring efficient switching capabilities.

Applications

• Power management circuits
• Power switching circuits
• Logic level translation

Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging details. Confirm that the UMT6 package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the total power dissipation limits when multiple elements are active simultaneously in the final assembly.

Selection Notes

Select this component when a combined NPN switching element and diode function are required in a minimal footprint. Verify that the -50 V collector-emitter voltage rating meets the system's maximum operating voltage. Check that the 10 kΩ input resistance matches the driving source impedance requirements for the logic interface.

Part Context

This device belongs to the EMF23/UMF23N series of dual transistors manufactured by ROHM. It utilizes silicon epitaxial planar technology and is housed in the UMT6 package, which is equivalent to the EIAJ SC-88 standard. The abbreviation symbol for this component type is F23.

Replacement Considerations

The datasheet identifies the 2SA1774 and DTC114E as independent components that can be used as alternatives if separate discrete parts are preferred over the integrated dual configuration.

FAQ

What is the structure of the UMF23NTR?

It is a silicon epitaxial planar transistor containing two independent elements: an NPN transistor (Tr1) and a built-in diode transistor (DTr2).

What are the absolute maximum ratings for the collector current?

The maximum collector current (IC) is -150 mA.

How does the mounting area compare to discrete components?

Using this dual transistor package allows the mounting cost and area to be cut in half compared to using separate discrete transistors.