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The UMF25NTR is a pre-biased bipolar transistor (BJT) manufactured by ROHM Semiconductor. It features an NPN and PNP configuration housed in a SOT-363-6 surface-mount package. The device integrates bias resistors, with typical input resistance values of 2.2 kOhms and a typical resistor ratio of 21. Key electrical parameters include a maximum operating frequency of 250 MHz, a collector-emitter voltage (VCEO) of 300 mV, and a DC collector/base gain (hFE min) of 80 at 10 mA/5 V for the NPN section. Power dissipation is rated at 150 mW, with a maximum operating temperature of +150°C.
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Select the UMF25NTR when space-constrained designs require dual polarity switching with integrated biasing. Its SOT-363-6 footprint suits high-density PCB layouts. Consider the 300 mV VCEO rating for low-voltage signal processing tasks. Ensure the 150 mW power dissipation limit fits the thermal management strategy of the target application environment.
This component belongs to the UMF series of complex bi-polar digital transistors from ROHM Semiconductor. It serves as a dual-element solution combining NPN and PNP functions, often replacing separate discrete transistors and resistors. The UMT6 package code corresponds to the SOT-363 form factor, designed for automated surface-mount assembly processes.
Public confirmed substitute part numbers are not available in the provided source data. For equivalent functionality, consider checking the DTA123J and DTC123J equivalents mentioned in related product details, though these are single-component references rather than direct dual-package substitutes.