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The UMF28NTR is a complex bipolar digital transistor manufactured by ROHM Semiconductor, featuring an integrated NPN and PNP configuration within a compact SOT-363-6 surface-mount package. This dual-component device incorporates built-in biasing resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 300 mV, continuous collector currents of -150 mA for the PNP section and 100 mA for the NPN section, and a power dissipation rating of 150 mW. The typical input resistance is 22 kOhms with a resistor ratio of 2.1. Operating frequencies reach up to 250 MHz, and the device supports a maximum operating temperature of +150°C.
Verify the specific ordering suffix and reel quantity requirements directly with authorized distributors or the manufacturer. Confirm RoHS compliance status and lead times prior to procurement. Ensure that the selected packaging format aligns with your manufacturing equipment capabilities. Cross-reference the datasheet revision date to ensure compatibility with current design standards.
Select this component when a combined NPN/PNP solution is required to minimize board space. Evaluate the low saturation voltage and high frequency response against circuit requirements. Consider the thermal performance given the 150 mW power dissipation limit in the SOT-363-6 package. Verify that the 22 kOhm input resistance matches the driving source impedance for optimal switching characteristics.
The UMF28NTR belongs to the UMF28N series of complex bipolar digital transistors from ROHM Semiconductor. This series is designed to replace multiple discrete components with a single integrated unit. It serves as a specialized alternative to standard discrete transistors where size reduction and simplified biasing networks are critical design constraints.
Direct substitutes may include other dual NPN/PNP digital transistors in SOT-363 packages from various manufacturers. Verify pinout compatibility and electrical parameter equivalence before substitution. Check for equivalent built-in resistor values and voltage ratings to ensure functional parity in the target application.