SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMF4NTR is a dual transistor component from ROHM Semiconductor, integrating a 2SA2018 PNP transistor and a DTC123EE digital NPN transistor within a single UMT6 (SC-88) package. The PNP element provides a collector-emitter voltage of -12V, continuous collector current of -500mA, and a transition frequency of 260MHz. The integrated digital NPN transistor features a supply voltage rating of 50V, built-in resistors of 2.2kΩ each, and a transition frequency of 250MHz. Total power dissipation is limited to 150mW across the package.
Verify the specific ordering suffix for tape-and-reel packaging when sourcing the UMF4NTR variant. Confirm that the total power dissipation limit of 150mW is not exceeded under operating conditions. Ensure thermal design accounts for the combined heat generation of both internal elements within the UMT6 package constraints.
Select this component when space-constrained designs require both a high-current PNP switch and a logic-compatible NPN driver. The integrated digital transistor simplifies biasing networks due to built-in resistors. Verify that the -12V rating of the PNP section meets the circuit requirements, as it is lower than standard 50V options.
This part belongs to the UMF4N series of power management transistors manufactured by ROHM Semiconductor. It utilizes the UMT6 package, also known as SC-88, which houses independent internal structures for the PNP transistor and the digital NPN transistor on a single silicon substrate.
No direct public substitute part numbers are documented for the UMF4NTR in the provided source material.