UMF8NTR

UMF8NTR

$0.11
  • Description:TRANS NPN PREBIAS/NPN 0.15W UMT6
  • Series:-

SKU:bdd7f7a614b8 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN PREBIAS/NPN 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:1 NPN Pre-Biased, 1 NPN
  • Current - Collector (Ic) (Max):100mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):50V, 15V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V / 270 @ 10mA, 2V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMF8NTR

Overview

The UMF8NTR is a dual transistor component manufactured by ROHM Semiconductor, housed in a UMT6 (SC-88) surface-mount package. It integrates a discrete NPN silicon epitaxial planar transistor (Tr1) and a built-in digital transistor (DTr2). Tr1 features a collector-emitter voltage of 12V, a transition frequency of 320 MHz, and a DC current gain ranging from 270 to 680. DTr2 operates with a supply voltage up to 50V, an input resistance of 47 kΩ, and an output saturation voltage of 100 mV typ. The total power dissipation is limited to 150 mW.

Feature Summary

  • Integrates a high-speed discrete transistor and a digital transistor within a single compact package to reduce mounting area and cost.

Applications

  • Power management circuits

Procurement Notes

Verify the specific ordering suffix 'TR' corresponds to the tape-and-reel packaging format containing 3000 units per reel. Confirm that the UMT6 package dimensions and marking codes align with the mechanical specifications provided in the official datasheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring both a high-gain switching element and a logic-compatible interface within restricted board space. Ensure the operating junction temperature remains within the -55°C to +150°C range and that the total power dissipation does not exceed 150 mW under all thermal conditions.

Part Context

This part belongs to the ROHM discrete transistor portfolio, specifically designed for power management applications. It combines standard bipolar switching capabilities with integrated biasing resistors, offering a consolidated solution compared to using separate components for signal processing and power control stages.

Replacement Considerations

The datasheet identifies the 2SC5585 as the equivalent discrete transistor for the Tr1 section. Designers replacing individual components should verify that the replacement discrete transistor matches the electrical characteristics of the Tr1 section while ensuring the DTr2 section remains compatible with the circuit requirements.

UMF8NTRUMF8NTR
$0.11
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