UMF9NTR

Overview

The UMF9NTR is a dual transistor component housed in a UMT6 package, integrating a silicon epitaxial planar NPN bipolar junction transistor (Tr1) and an N-channel enhancement mode MOSFET (Tr2). The BJT offers a collector current of 500 mA with a collector-emitter breakdown voltage of 12 V. The MOSFET provides a drain current of 100 mA and a drain-source breakdown voltage of 30 V. Total power dissipation is rated at 150 mW across both elements.

Feature Summary

• Integrates a BJT and MOSFET within a single compact package to reduce mounting area.

Applications

• Power management circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the UMT6 package dimensions align with the target PCB land pattern requirements before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring combined switching capabilities from distinct transistor technologies within a restricted footprint. Evaluate the total power dissipation limits carefully, as the 150 mW rating applies collectively to both internal devices under recommended land mounting conditions.

Part Context

This device belongs to ROHM Semiconductor's discrete transistor portfolio, specifically designed for applications where space efficiency is critical. It consolidates two independent semiconductor structures into one physical unit, simplifying assembly processes while maintaining distinct electrical characteristics for each element.

Replacement Considerations

No verified substitute part numbers are documented in the provided source material.