UMG3NTR

UMG3NTR

$0.40
  • Description:TRANS 2NPN PREBIAS 0.15W UMT5
  • Series:-

SKU:fe6a05a0cbb2 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:UMT5

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UMG3NTR

Overview

The UMG3NTR is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-353-5 (UMT5) surface-mount package. It integrates two NPN transistors with built-in biasing resistors to simplify circuit design. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device features a typical input resistance of 1 kΩ for both bases, with a minimum DC current gain (hFE) of 100 at 1 mA and 5 V. It operates up to a maximum frequency of 250 MHz, with a power dissipation rating of 150 mW and a maximum operating temperature of +150°C.

Feature Summary

  • Integrates two NPN transistors with internal base resistors in a compact SMD footprint
  • Provides high current gain suitable for switching and amplification applications
  • Supports high-frequency operation up to 250 MHz

Applications

  • Differential amplifier circuits
  • High-frequency crystal oscillators
  • Starters and general-purpose digital logic interfaces

Procurement Notes

Verify the specific suffix 'NTR' corresponds to the tape-and-reel packaging configuration required for automated assembly. Confirm RoHS compliance status through the official datasheet or manufacturer documentation prior to final procurement decisions.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a small outline package. Ensure the 1 kΩ input resistance aligns with the driving source impedance and that the 50 V voltage rating exceeds the maximum circuit supply voltage.

Part Context

This part belongs to the UMG3N series of complex digital transistors from ROHM Semiconductor. These devices are designed to replace multiple discrete components, reducing board space and assembly complexity. The UMT5 package offers a standardized footprint for dual-transistor solutions in portable electronics.

Replacement Considerations

Publicly documented equivalents include the DTCT143T or similar dual NPN digital transistors in SOT-353 packages from other manufacturers. Verify pinout compatibility and electrical parameter margins before substitution.

UMG3NTRUMG3NTR
$0.40
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