UMG4N-7

Overview

The UMG4N-7 is a dual NPN pre-biased transistor manufactured by Diodes Incorporated, housed in an SOT-353 surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design and reduce board space. The device features epitaxial planar die construction and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a collector-emitter breakdown voltage (V(BR)CEO) of 50 V, a continuous collector current (IC) of 100 mA, and a typical DC current gain (hFE) of 330 at IC = 1mA. The input resistance (R1) is typically 10 kΩ, and the transition frequency (fT) is 250 MHz.

Feature Summary

• Integrates two NPN transistors with built-in bias resistors to minimize component count and PCB area
• Utilizes epitaxial planar die construction for reliable performance
• Designed for automated assembly in compact surface-mount applications

Applications

• Interface circuits requiring signal buffering or level shifting
• Driver stages for low-power switching applications
• Inverter logic gates in digital systems

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration containing 3000 units per reel. Confirm that the RoHS compliance status aligns with project requirements, noting the device is lead-free. Ensure the SOT-353 package dimensions match the target footprint layout before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated base resistors is required to save space. The 50 V collector-emitter voltage rating suits low-voltage digital interfaces. Consider the 100 mA maximum collector current limit for load requirements. The SOT-353 package is appropriate for high-density designs where standard discrete transistors would consume excessive board area.

Part Context

The UMG4N-7 belongs to the UMG4N series of dual pre-biased transistors from Diodes Incorporated. This series consolidates two NPN transistors and their associated biasing resistors into a single SOT-353 package. The product line targets applications needing simplified circuit topologies and reduced assembly costs through component integration.

Replacement Considerations

Cross-reference with other dual NPN pre-biased transistors in the SOT-353 package. Verify matching electrical parameters such as V(BR)CEO, IC, and R1 values. Ensure pinout compatibility and thermal resistance characteristics are equivalent for direct substitution.