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The UMG4NTR is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-353-5 surface-mount package. It features a typical input resistance of 10 kOhms and supports a maximum collector-emitter voltage (VCEO) of 50 V with a continuous collector current of 100 mA. The device has a power dissipation rating of 150 mW and operates at frequencies up to 250 MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1 mA and 5 V, an emitter-base voltage (VEBO) of 5 V, and a maximum operating temperature of +150 C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions align with moisture sensitivity level requirements to maintain device reliability during assembly processes.
Select this component when a dual NPN configuration with 10 kOhm base resistors is required within a five-pin SMD footprint. Evaluate thermal constraints against the 150 mW dissipation limit and ensure voltage ratings accommodate the 50 V collector-emitter specification for the target application environment.
This part belongs to the UMG4N series of complex transistors from ROHM Semiconductor. These devices combine NPN transistors with internal resistors to reduce board space and simplify schematic designs compared to discrete component implementations.
Cross-reference with other dual NPN digital transistors in the SOT-353 package offering similar 50 V ratings and 100 mA current capacity. Verify pinout compatibility and resistor values match the original design requirements before substitution.