UMG4NTR

UMG4NTR

$0.40
  • Description:TRANS 2NPN PREBIAS 0.15W UMT5
  • Series:-

SKU:f56ea9e51bf5 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:UMT5

Download product information

UMG4NTR

Overview

The UMG4NTR is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-353-5 surface-mount package. It features a typical input resistance of 10 kOhms and supports a maximum collector-emitter voltage (VCEO) of 50 V with a continuous collector current of 100 mA. The device has a power dissipation rating of 150 mW and operates at frequencies up to 250 MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 100 at 1 mA and 5 V, an emitter-base voltage (VEBO) of 5 V, and a maximum operating temperature of +150 C.

Feature Summary

  • Integrates two NPN transistors with built-in biasing resistors for simplified circuit design
  • Optimized for high-speed switching applications with a transition frequency of 250 MHz
  • Designed for compact surface-mount assembly using the SOT-353-5 package

Applications

  • General-purpose digital switching circuits
  • Interface drivers for logic level translation
  • High-frequency signal processing stages

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions align with moisture sensitivity level requirements to maintain device reliability during assembly processes.

Selection Notes

Select this component when a dual NPN configuration with 10 kOhm base resistors is required within a five-pin SMD footprint. Evaluate thermal constraints against the 150 mW dissipation limit and ensure voltage ratings accommodate the 50 V collector-emitter specification for the target application environment.

Part Context

This part belongs to the UMG4N series of complex transistors from ROHM Semiconductor. These devices combine NPN transistors with internal resistors to reduce board space and simplify schematic designs compared to discrete component implementations.

Replacement Considerations

Cross-reference with other dual NPN digital transistors in the SOT-353 package offering similar 50 V ratings and 100 mA current capacity. Verify pinout compatibility and resistor values match the original design requirements before substitution.

UMG4NTRUMG4NTR
$0.40
Buy Now