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The UMG5NTR is a dual NPN pre-biased transistor array manufactured by ROHM Semiconductor. It integrates two NPN transistors with built-in biasing resistors within a compact SOT-353 (UMT5) surface-mount package. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a maximum power dissipation (PD) of 150 mW. The device features a typical base input resistance (R1) of 10 kOhms and an emitter-base resistance (R2) of 47 kOhms. It operates at a transition frequency (fT) of up to 250 MHz and supports a maximum operating temperature of +150°C.
Verify the specific ordering suffix against official ROHM documentation to confirm packaging configuration, as suffixes may indicate variations in tape-and-reel specifications or cut-tape availability. Confirm RoHS compliance status directly from the manufacturer's datasheet before finalizing procurement plans.
Select the UMG5NTR when a dual NPN configuration with fixed 10 kOhm base and 47 kOhm emitter resistors is required. Ensure the 50 V voltage rating and 100 mA current capacity align with the target circuit requirements. Verify that the SOT-353 footprint matches the PCB layout constraints.
This component belongs to the UMG series of complex transistors designed for space-constrained applications. It serves as a functional equivalent to discrete combinations such as the DTC114Y pair, offering a simplified alternative to using separate transistors and resistors in digital logic interfaces.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official ROHM documentation for potential cross-reference recommendations.