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The UMG6NTR is a dual NPN digital transistor manufactured by ROHM Semiconductor, designed for general-purpose switching applications. It integrates two DTC114T chips within a single SOT-353-5 surface-mount package. The device features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA, with a peak DC collector current capability of 100 mA. Power dissipation is rated at 150 mW. The typical input resistance is 10 kOhms, providing a resistor ratio of 1. The minimum DC current gain (hFE) is specified as 100 at 1 mA and 5 V. Operating temperatures range from -55°C to +150°C, with an emitter-base voltage (VEBO) of 5 V.
Verify the component status before procurement, as availability may vary. Confirm that the SOT-353-5 package dimensions align with your PCB footprint requirements. Ensure that the 100 mA current rating and 50 V voltage limits meet your specific circuit design constraints. Check for RoHS compliance documentation if required by your manufacturing standards.
Select the UMG6NTR when a dual NPN configuration with a 10 kOhm input resistance is required. Compare against similar models like UMG2NTR or UMG4NTR if different current ratings or resistance values are needed. Consider the 150 mW power dissipation limit and thermal management requirements for your application environment.
The UMG6NTR belongs to the UMG series of complex digital transistors from ROHM Semiconductor. This series combines NPN transistors with internal bias resistors to reduce component count and board space. The UMG6NTR specifically utilizes the SOT-353-5 package, offering a compact solution for dual-channel applications compared to larger discrete transistor setups.
Potential substitutes include other ROHM dual NPN digital transistors such as UMG2NTR or UMG4NTR, provided pin compatibility and electrical specifications match. Verify that alternative components offer equivalent hFE, VCEO, and input resistance values to ensure circuit functionality remains unchanged.