UMG7NTR

UMG7NTR

$0.09
  • Description:TRANS 2NPN PREBIAS 0.15W UMT5
  • Series:-

SKU:a8d0a2fc483f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT5
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:5-TSSOP, SC-70-5, SOT-353
  • Supplier Device Package:UMT5

Download product information

UMG7NTR

Overview

The UMG7NTR is a dual NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates two NPN transistors with internal biasing resistors in a compact SMD package. Key electrical specifications include a collector-emitter breakdown voltage of 50V and a continuous collector current rating of 100mA. The device features a power dissipation capacity of 150mW and operates within a maximum junction temperature range up to +150°C. Designed for surface mount technology, it utilizes the UMT-5 (SOT-353) five-pin configuration to facilitate space-efficient circuit layouts while providing reliable switching performance.

Feature Summary

  • Integrates dual NPN transistors with built-in biasing resistors to simplify circuit design
  • Provides high-density packaging solution through compact UMT-5 surface mount configuration
  • Supports high-temperature operation suitable for demanding electronic environments

Applications

  • General-purpose signal switching circuits
  • Logic level translation interfaces
  • Driver stages for small-signal applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation. Ensure storage conditions maintain integrity prior to assembly. Review datasheet for handling precautions related to electrostatic discharge sensitivity during manufacturing processes.

Selection Notes

Select this component when dual NPN switching functionality with integrated biasing is required. Consider the 50V voltage rating and 100mA current limit for load compatibility. Evaluate the UMT-5 footprint against available PCB real estate constraints. Compare thermal dissipation requirements against expected operating temperatures.

Part Context

This part belongs to the discrete semiconductor category, specifically within bipolar junction transistor arrays. It serves as a pre-biased digital transistor solution designed to replace multiple discrete components. The product line focuses on miniaturization and simplified integration for modern electronic assemblies requiring efficient signal processing.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material.

UMG7NTRUMG7NTR
$0.09
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