UMG9NTR

Overview

The UMG9NTR is a dual NPN complex digital transistor from ROHM Semiconductor, housed in an SOT-353-5 surface-mount package. It integrates two DTC114E chips within a single unit, featuring built-in biasing resistors of 10 kOhms each (R1 = R2). The device supports a collector continuous current of 100 mA and a collector-emitter voltage of 50 V, with a maximum operating frequency of 250 MHz. Power dissipation is rated at 150 mW, and the junction temperature can reach +150°C. Designed for emitter-common configurations, it simplifies circuit design by eliminating external input resistors.

Feature Summary

• Integrates two DTC114E chips into a single compact package to reduce component count.
• Features thin-film bias resistors that provide complete isolation and eliminate parasitic effects.
• Enables negative biasing of the input due to the specific resistor construction.
• Simplifies circuit design by allowing direct connection without external input resistors.

Applications

• Inverter circuits
• Interface circuits
• Driver circuits

Procurement Notes

Verify the manufacturer part number against official ROHM documentation to ensure authenticity. Confirm RoHS compliance status through the specific datasheet revision. Check for automotive grade variants if required for your application. Ensure the SOT-353-5 package matches your PCB footprint requirements before ordering.

Selection Notes

Select this component when space constraints require integrating two NPN transistors with fixed 10 kOhm bias resistors. It is suitable for applications needing high-speed switching up to 250 MHz. Consider the 100 mA current rating and 50 V voltage limit during design. Verify thermal management capabilities given the 150 mW power dissipation in the small package.

Part Context

The UMG9NTR belongs to the UMG9N series of complex digital transistors. It serves as a dual-channel solution, effectively replacing two discrete transistors and their associated biasing networks. This integration aids in miniaturizing designs while maintaining signal integrity through built-in isolation features.

Replacement Considerations

Direct substitutes include other dual NPN digital transistors with similar 10 kOhm bias resistors and SOT-353-5 packaging. Verify pinout compatibility and electrical parameters such as hFE and VCEO before substitution. Consult ROHM's cross-reference tools for confirmed equivalent parts.