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The UMH10NFHATN is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors integrated into a single SOT-363 (UMT6) package. It includes built-in bias resistors with typical values of 2.2 kOhms for the base resistor and 47 kOhms for the emitter resistor. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical parameters include a minimum DC current gain of 80 at 10mA and 5V, a saturation voltage of 300mV at specific test conditions, and a maximum operating frequency of 250MHz. Power dissipation is rated at 150mW, and it holds AEC-Q101 automotive qualification.
Verify the complete part number including the suffix to ensure correct packaging configuration such as cut tape or reel quantities. Confirm that the specified input resistance values match the design requirements before ordering. Check for RoHS compliance status and ensure storage conditions adhere to moisture sensitivity level guidelines during handling and assembly processes.
Select this component when a dual NPN digital transistor with a 2.2k base resistor is required in an SOT-363 package. Compare the 50V breakdown voltage and 100mA current rating against circuit demands. Ensure the 150mW power dissipation limit accommodates the thermal environment. Verify compatibility with existing PCB footprints designated for UMT6 or SC-88 packages.
This part belongs to the UMH series of complex transistors from ROHM Semiconductor, designed to replace discrete resistor-transistor networks. The UMH10 variant specifically denotes the 2.2k/47k resistor ratio configuration. It serves as a direct replacement for standard discrete biasing setups in space-constrained designs.
The UMH10NTN is listed as a parameter-equivalent substitute within the same manufacturer lineup. Verify pinout compatibility and exact resistor tolerances when substituting with other manufacturers' parts like the DDC123JU.