UMH10NTN

Overview

The UMH10NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363-6 surface-mount package. It integrates two pre-biased transistors with typical input resistors of 2.2 kΩ and emitter-base resistors of 47 kΩ. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 80 at 10 mA and 5 V, a maximum operating frequency of 250 MHz, and power dissipation of 150 mW. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Integrates two NPN transistors with built-in biasing resistors for simplified circuit design
• Compact SOT-363-6 surface-mount package suitable for space-constrained applications
• High-speed operation capability up to 250 MHz switching frequency

Applications

• Inverter circuits requiring dual transistor functionality without external biasing components
• High-frequency signal processing and switching applications
• General-purpose digital logic interfacing and level shifting

Procurement Notes

Verify the specific suffix 'TN' against official ROHM documentation to confirm tape-and-reel packaging configuration. Ensure compatibility with standard SMT assembly processes for the SOT-363 footprint. Cross-reference the manufacturer part number with authorized distributor catalogs to validate RoHS compliance status and current production lifecycle stage before finalizing procurement plans.

Selection Notes

Select the UMH10NTN when a dual NPN configuration with low input resistance (2.2 kΩ) is required for faster switching or higher drive capability compared to higher resistance variants. Compare hFE specifications and VCEO ratings against alternative models like the UMH9NTN or UMH25NTN to ensure adequate margin for the target application's voltage and current requirements.

Part Context

This component belongs to the UMH10N series of dual digital transistors from ROHM Semiconductor. These devices are designed as replacements for discrete resistor-transistor networks, reducing board space and assembly complexity. The UMH10NTN specifically offers a balance of moderate input resistance and high-speed performance within the standard UMT6/SOT-363 form factor used across consumer and industrial electronics.

Replacement Considerations

Direct functional equivalents may include other dual NPN digital transistors in SOT-363 packages with similar 2.2 kΩ input resistance and 50V rating, such as parts from the DTC series if pinout compatibility allows. Verify that substitute components meet the same 250 MHz frequency and 100 mA current specifications.