UMH11NTN

UMH11NTN

$0.40
  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-

SKU:2085007bf799 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):10kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMH11NTN

Overview

The UMH11NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical input resistance of 10 kOhms and an emitter-base resistance of 10 kOhms. It offers a minimum DC current gain of 30 at 5mA and 5V, with a transition frequency of 250MHz. Power dissipation is rated at 150mW, and the operating temperature range extends up to +150°C.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors in a single ultra-small package
  • Eliminates external resistor requirements for basic switching and logic applications
  • Provides high-speed performance suitable for signal processing circuits

Applications

  • Differential amplifier circuits
  • High-frequency crystal oscillator starters
  • General-purpose logic level shifting and switching

Procurement Notes

Verify the specific suffix against the manufacturer's datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original documentation to validate RoHS compliance and AEC-Q101 qualification status if required for automotive or industrial reliability standards.

Selection Notes

Select this component when space constraints necessitate a dual-transistor solution in a SOT-363 footprint. Compare internal resistor values against the target circuit's base drive requirements. Verify that the 50V voltage rating and 100mA current capacity exceed the application's peak operational demands to ensure long-term reliability.

Part Context

This part belongs to the UMH11N series of pre-biased dual transistors from ROHM Semiconductor. It serves as a direct replacement for discrete dual NPN configurations, reducing board space and assembly complexity. The UMT6 package variant is optimized for high-density surface-mount technology production lines.

Replacement Considerations

Equivalent single-part alternatives include DTC114E. Cross-reference internal resistor ratios and hFE characteristics before substitution to maintain circuit stability.

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