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The UMH11NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two NPN transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical input resistance of 10 kOhms and an emitter-base resistance of 10 kOhms. It offers a minimum DC current gain of 30 at 5mA and 5V, with a transition frequency of 250MHz. Power dissipation is rated at 150mW, and the operating temperature range extends up to +150°C.
Verify the specific suffix against the manufacturer's datasheet to confirm pinout compatibility and electrical tolerances. Ensure the procurement channel provides original documentation to validate RoHS compliance and AEC-Q101 qualification status if required for automotive or industrial reliability standards.
Select this component when space constraints necessitate a dual-transistor solution in a SOT-363 footprint. Compare internal resistor values against the target circuit's base drive requirements. Verify that the 50V voltage rating and 100mA current capacity exceed the application's peak operational demands to ensure long-term reliability.
This part belongs to the UMH11N series of pre-biased dual transistors from ROHM Semiconductor. It serves as a direct replacement for discrete dual NPN configurations, reducing board space and assembly complexity. The UMT6 package variant is optimized for high-density surface-mount technology production lines.
Equivalent single-part alternatives include DTC114E. Cross-reference internal resistor ratios and hFE characteristics before substitution to maintain circuit stability.