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The UMH1NFHATN is a dual digital transistor manufactured by ROHM Semiconductor, featuring two NPN transistors with built-in bias resistors in a SOT-363 (UMT6) surface-mount package. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device has a power dissipation rating of 150 mW and a maximum operating temperature of +150°C. It includes an emitter-base voltage of 3 V and meets AEC-Q101 automotive qualification standards.
Verify the complete part number including the suffix to ensure correct packaging and automotive grade compliance. Confirm RoHS status and specific reel quantities with authorized distributors prior to ordering. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during assembly.
Select this component when a dual NPN switch with integrated biasing is required in a compact form factor. Consider the 50 V collector-emitter voltage and 100 mA current limits for load compatibility. Verify that the 150 mW power dissipation rating suits the thermal management strategy of the target application environment.
This component belongs to ROHM's UMH series of complex transistors designed for automotive and industrial applications. It serves as a space-saving alternative to discrete resistor-transistor networks. The series is characterized by high reliability and standardized pinouts compatible with various surface-mount assembly processes.
Direct substitutes include other dual NPN digital transistors in SOT-363 packages such as the DTC144E equivalent configurations. Verify electrical parameters like input resistance and hFE against the original design requirements before substitution.