UMH1NTN

UMH1NTN

$0.25
  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-

SKU:ad5e32f31da9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):22kOhms
  • Resistor - Emitter Base (R2):22kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:56 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMH1NTN

Overview

The UMH1NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. This component integrates two independent NPN transistors with built-in bias resistors to simplify circuit design and reduce board space. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per channel. The device features a typical input resistance of 2.2 kΩ and supports a maximum operating frequency of 250MHz. With a power dissipation rating of 150mW and an operating temperature range up to +150°C, it is suitable for high-density logic switching and signal processing applications.

Feature Summary

  • Integrates two independent NPN transistors with built-in base resistors to eliminate external resistor requirements.
  • Compact SOT-363 packaging designed for high-density surface-mount assembly.
  • High-speed operation capability with a transition frequency of 250MHz.
  • Robust thermal performance supporting junction temperatures up to 150°C.

Applications

  • Digital logic level shifting and interface circuits
  • General-purpose signal switching and buffering
  • Clock driver circuits for low-frequency oscillators

Procurement Notes

Verify the complete part number suffix against official ROHM documentation to ensure correct packaging configuration. Confirm that the specific revision matches the required input resistance values and hFE ranges. Check RoHS compliance status and AEC-Q101 qualification if automotive reliability is mandated. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet to prevent package damage during soldering.

Selection Notes

Select this component when space-constrained designs require dual NPN switching without external biasing networks. Compare internal resistor ratios against alternative models like the UMH11NTN or UMH9NTN to match specific drive requirements. Evaluate the 100mA current limit against load demands to avoid saturation issues. Consider the 50V voltage rating for compatibility with standard 3.3V and 5V logic systems.

Part Context

The UMH1NTN belongs to ROHM's UMH series of pre-biased transistors, which are engineered to replace multiple discrete components. It serves as a direct functional replacement for single transistors paired with external resistors in compact consumer electronics. The SOT-363 form factor allows it to fit into tight footprints common in mobile devices and portable instrumentation.

Replacement Considerations

Direct substitutes include other ROHM dual NPN digital transistors in SOT-363 such as UMH11NTN or UMH9NTN, provided their internal resistor values align with the circuit design. Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter matching.

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