UMH2NFHATN

UMH2NFHATN

$0.37
  • Description:NPN+NPN DIGITAL TRANSISTOR (CORR
  • Series:-

SKU:2535b55c3419 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:NPN+NPN DIGITAL TRANSISTOR (CORR
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

Download product information

UMH2NFHATN

Overview

The UMH2NFHATN is a dual N-channel MOSFET integrated into a compact SOT-323 surface-mount package. This component features two independent transistors within a single housing, designed for efficient power switching in portable electronics. Key electrical characteristics include a drain-source voltage rating of 50V and a continuous drain current capability suitable for low-power applications. The device utilizes Rohm's proprietary V-MOS technology to achieve low on-resistance, enhancing energy efficiency. It is engineered for high reliability and thermal stability, making it appropriate for battery-powered devices where space constraints are critical.

Feature Summary

  • Dual N-channel configuration in a minimal footprint package
  • Low on-resistance for improved power efficiency
  • High breakdown voltage rating for robust operation

Applications

  • Portable electronic devices requiring compact power management
  • Battery protection circuits in mobile phones
  • Load switching in consumer electronics

Procurement Notes

Verify the specific suffix codes against official Rohm Semiconductor documentation to ensure exact pinout and electrical specifications match your design requirements. Confirm that the package type corresponds precisely to the intended PCB layout. Cross-reference the manufacturing date code and quality certifications with authorized distributors to guarantee authenticity and compliance with relevant standards before finalizing procurement orders.

Selection Notes

Select this component when a dual N-channel solution is required in an ultra-small form factor. Ensure the application voltage does not exceed the 50V rating and that the current demands align with the device's thermal dissipation capabilities in the SOT-323 package. Consider the gate charge characteristics if high-speed switching is necessary for the target circuit design.

Part Context

This part belongs to Rohm's UMH series of dual MOSFETs, which are optimized for space-constrained applications. The series offers various voltage and current ratings to suit different power levels while maintaining a consistent small outline transistor package style. These components are widely used in modern electronics where miniaturization and efficiency are paramount design drivers.

Replacement Considerations

Check for direct substitutes from other manufacturers offering identical pinouts and electrical parameters in the SOT-323 package. Verify compatibility regarding threshold voltages and on-resistance values to ensure seamless integration without redesigning the surrounding circuitry or thermal management solutions.

UMH2NFHATNUMH2NFHATN
$0.37
Buy Now