UMH2NTN

UMH2NTN

$0.40
  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-

SKU:9c88cfe87225 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):47kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMH2NTN

Overview

The UMH2NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two independent NPN transistors with built-in biasing resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The device features a typical input resistance (R1) of 47 kΩ and an emitter-base resistance (R2) of 47 kΩ. DC current gain (hFE) is specified at a minimum of 68 at 5mA and 5V, with a transition frequency (fT) of 250MHz. Maximum power dissipation is 150mW, and the saturation voltage (VCEsat) is 300mV at specific test conditions.

Feature Summary

  • Dual NPN configuration with integrated base and emitter resistors eliminates external component requirements for basic switching applications.
  • High-speed operation capability supported by a 250MHz transition frequency suitable for digital signal processing.
  • Compact SOT-363 packaging optimizes PCB space utilization for portable and dense electronic designs.

Applications

  • Digital logic level shifting and buffer circuits
  • General-purpose switching applications in consumer electronics
  • Signal amplification and inversion stages

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging format, such as tape and reel or cut tape, as these affect handling procedures. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines to maintain component reliability during assembly.

Selection Notes

Select the UMH2NTN when a dual NPN solution with fixed 47kΩ biasing resistors is required. Compare internal resistor values against other UMH series variants like UMH9NTN or UMH10NTN if different input impedance characteristics are needed. Verify that the 50V voltage rating and 100mA current capacity align with the target circuit's operational limits and thermal constraints.

Part Context

This component belongs to the UMH2N series of pre-biased digital transistors from ROHM Semiconductor. It serves as a direct replacement for discrete resistor-transistor networks, reducing board space and assembly costs. The part is widely used in standard commercial electronics where reliable NPN switching with minimal external components is preferred over complex discrete designs.

Replacement Considerations

Direct pin-compatible substitutes within the same family include UMH25NTN, which shares the UMT6 package but differs in internal resistor ratios. Cross-series replacements like UMX1NTN offer similar dual NPN functionality but may have different electrical parameters. Always verify resistor values and hFE ranges before substituting to ensure circuit compatibility.

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