UMH3NFHATN

UMH3NFHATN

$0.27
  • Description:NPN+NPN DIGITAL TRANSISTOR(WITH
  • Series:-

SKU:c108f727f7d1 Category: Brand:

  
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Product Detailed Parameters

  • Description:NPN+NPN DIGITAL TRANSISTOR(WITH
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):4.7kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMH3NFHATN

Overview

The UMH3NFHATN is a dual NPN digital transistor from ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two pre-biased transistors with typical base input resistances of 1 kΩ and 4.7 kΩ. The device supports a collector-emitter voltage of 50V and a continuous collector current of 100mA per channel. Key electrical parameters include a transition frequency of 250MHz, maximum power dissipation of 150mW, and a minimum DC current gain (hFE) of 30 at 5mA/5V. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.

Feature Summary

  • Integrates two NPN transistors with built-in bias resistors to simplify circuit design
  • AEC-Q101 qualified for automotive reliability standards
  • Compact SOT-363 package suitable for space-constrained applications

Applications

  • Automotive electronic control units
  • General-purpose switching circuits
  • Logic level translation interfaces

Procurement Notes

Verify the specific suffix 'TN' indicates tape-and-reel packaging when ordering. Confirm AEC-Q101 compliance requirements against the target application's quality standards. Ensure the 50V VCEO rating meets the system's voltage headroom needs. Check that the 150mW power dissipation limit is sufficient for the intended thermal environment.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. Compare the 1kΩ and 4.7kΩ resistor options against the driving source impedance. Consider the 250MHz transition frequency for high-speed switching needs. Verify compatibility with the SOT-363 land pattern during PCB layout.

Part Context

This part belongs to ROHM's UMH series of complex digital transistors. It serves as a direct replacement for single transistors like the DTC143T, reducing component count. The UMT6 package variant offers a smaller profile compared to standard SOT-363 versions.

Replacement Considerations

The UMH3NFHA is listed as an alias. Single-transistor equivalents include the DTC143T. Verify pinout compatibility before substitution.

UMH3NFHATNUMH3NFHATN
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