UMH3NTN

Overview

The UMH3NTN is a dual NPN digital transistor array manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two pre-biased transistors with an input resistance of 4.7 kOhms and an emitter-base resistance of 4.7 kOhms. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. Key electrical characteristics include a minimum DC current gain of 100 at 1mA/5V, a saturation voltage of 300mV at 250µA/5mA, and a transition frequency of 250MHz. Power dissipation is rated at 150mW, with an operating temperature range extending to +150°C.

Feature Summary

• Integrates two NPN transistors within a single ultra-small SOT-363 package for space-efficient circuit design.
• Includes built-in bias resistors to eliminate external components, simplifying switching circuit configuration.
• Features high-speed operation capabilities suitable for applications requiring rapid signal transitions.

Applications

• Differential amplifier circuits
• High-frequency crystal oscillator starters
• General-purpose switching logic interfaces

Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm exact packaging configurations such as tape and reel quantities. Ensure that the component meets RoHS compliance requirements for the intended manufacturing process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required in a minimal footprint. The 4.7kOhm input resistance offers a balanced drive capability for standard logic levels. Consider the 250MHz transition frequency for high-speed applications, while ensuring the 150mW power dissipation limit aligns with the thermal constraints of the target PCB layout.

Part Context

This component belongs to the UMH3 series of complex transistors designed for general-purpose use. It serves as a compact alternative to discrete resistor-transistor networks, reducing assembly complexity. The device is classified as a standard-grade product and is not recommended for automotive equipment applications according to manufacturer guidelines.

Replacement Considerations

Publicly documented equivalent single-part substitutes include DTC143T. Designers should verify pin compatibility and electrical parameter alignment when substituting with other dual NPN arrays from different manufacturers.