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The UMH4NFHATN is a dual NPN digital transistor with built-in bias resistors, manufactured by ROHM Semiconductor. It operates within a supply voltage range of 1V to 50V and supports a continuous collector current of 100mA. The device features an input resistance (R1) ranging from 1kΩ to 10kΩ and includes emitter-base resistance options between 1kΩ and 47kΩ. Packaged in the SOT-363 (UMT6) surface-mount format, it offers a power dissipation capacity of 150mW and a maximum operating temperature of +150°C. This component holds AEC-Q101 automotive qualification.
Verify the specific suffix 'TN' indicates tape-and-reel packaging when ordering. Confirm that the selected input resistance value matches the design requirements, as the base model may offer multiple resistor variants. Ensure the procurement documentation explicitly states AEC-Q101 compliance if automotive grade validation is required for the final assembly.
Select this component when a dual NPN solution with integrated biasing is needed to reduce external component count. Consider the 100mA collector current limit and 50V breakdown voltage for suitability. Verify the required input resistance value against available variants within the UMH4NFHA series to ensure proper drive compatibility.
This part belongs to the UMH4NFHA series of complex transistors from ROHM Semiconductor. It serves as a pre-biased dual transistor array designed to replace discrete resistor-transistor combinations. The UMT6 package provides a small footprint compared to standard through-hole alternatives, facilitating high-density PCB layouts.
The DTC114T is listed as an equivalent single-part alternative for individual sections. Designers should verify pinout compatibility and electrical parameters when substituting with other dual digital transistor families or single NPN devices with external biasing.