UMH4NTN

Overview

The UMH4NTN is a dual NPN pre-biased transistor array manufactured by Rohm Semiconductor, housed in a surface-mount UMT6 package (SOT-363). It integrates two independent NPN transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per transistor. The device features a typical base resistance (R1) of 10 kΩ and achieves a DC current gain (hFE) of at least 100 at 1mA and 5V. It operates with a transition frequency of 250MHz and has a maximum power dissipation of 150mW.

Feature Summary

• Integrates two independent NPN transistors with built-in bias resistors to reduce external component count.
• Optimized for high-speed switching applications with a 250MHz transition frequency.
• Designed for low-voltage logic interfacing with a Vce(sat) of 300mV at specified currents.

Applications

• Digital signal switching and logic level translation
• Buffer circuits for microcontroller I/O lines
• Small-signal amplification stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to ensure correct packaging configuration. Confirm that the UMT6 package dimensions align with the target PCB footprint. Check RoHS compliance status if required by environmental regulations. Ensure the selected variant matches the required bias resistor values for the intended application circuit.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to save board space. Compare the 10kΩ internal base resistance against other models in the UMH4 series if different drive currents are needed. Verify that the 50V voltage rating exceeds the maximum operating voltage of the target circuit. Consider the 150mW power dissipation limit when designing thermal management for dense layouts.

Part Context

The UMH4NTN belongs to Rohm's UMH4N series of digital transistors. This series is designed to replace discrete resistor-transistor combinations in compact consumer electronics. The UMT6 package provides a small form factor suitable for portable devices. It serves as a direct functional replacement for similar dual NPN arrays from other manufacturers, provided pinouts and electrical limits match.

Replacement Considerations

Direct substitutes include the UMH4NTG or UMH4NTT depending on packaging requirements. Cross-reference with DTA114ET equivalents from other vendors, ensuring the internal resistor ratios and hFE characteristics are compatible. Verify pinout compatibility before substitution to avoid circuit damage.