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The UMH6NTR is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a TUMT-6 (SOT-363) surface-mount package. It integrates two NPN transistors with typical input resistors of 47 kOhms and a resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, continuous collector current of 30 mA, and peak DC collector current of 100 mA. The device features a minimum DC current gain (hfe) of 68 and a power dissipation rating of 150 mW. It operates within a temperature range of -55°C to +150°C.
Verify the component status before procurement as it is marked NRND (Not Recommended for New Designs). Confirm availability through authorized distributors, noting that stock levels may be limited. Ensure the ordering suffix matches the required tape and reel specifications. Check for RoHS compliance details in the official datasheet prior to finalizing orders.
Select this component for applications requiring dual NPN switching with integrated base resistors. Verify that the 50 V voltage rating and 30 mA current capacity meet circuit requirements. Consider the TUMT-6 package dimensions for PCB layout compatibility. Evaluate thermal management needs given the 150 mW power dissipation limit and high-temperature operation capability.
The UMH6NTR belongs to the UMH6N series of digital transistors from ROHM Semiconductor. This series is designed to replace multiple discrete components by integrating transistors and resistors into a single package. The part is categorized under bipolar junction transistors and is intended for use in various electronic devices requiring compact switching solutions.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's latest recommendations or equivalent general-purpose dual NPN digital transistors with similar pinouts and electrical characteristics if replacement is necessary.