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Product Detailed Parameters
- Description：TRANS 2NPN PREBIAS 0.15W UMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Transistor Type：2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Resistor - Base (R1)：4.7kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- pa_vce-saturation-max-ib-ic：
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：150mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：UMT6
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Overview
The UMH7NTR is a dual NPN digital transistor from ROHM Semiconductor, housed in a UMT6 (SC-88) surface-mount package. It integrates two DTC143T transistors with built-in bias resistors. Key electrical parameters include a collector-emitter breakdown voltage of 50V and a continuous collector current of 100mA. The device features a typical input resistance of 4.7kΩ and a DC current transfer ratio ranging from 100 to 600 at VCE=5V and IC=1mA. Total power dissipation is rated at 150mW, with an operating temperature range spanning -55°C to +150°C.
Feature Summary
- Integrates two NPN digital transistors within a single compact UMT6 package to reduce component count.
- Includes built-in bias resistors to simplify circuit design and minimize board space requirements.
Applications
- General-purpose switching circuits
- Driver circuits for logic interfaces
- Signal level shifting applications
Procurement Notes
Verify the specific ordering suffix to confirm packaging format, as the base part number denotes the component type. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure that the total power dissipation limits are respected under actual operating conditions to maintain reliability.
Selection Notes
Select this component when a dual NPN configuration with integrated biasing is required in a small footprint. Verify that the 50V collector-emitter voltage rating meets the circuit's maximum supply requirements. Check that the 150mW total power dissipation capacity is sufficient for the expected thermal environment and duty cycle.
Part Context
This component belongs to the UMH7N series of general-purpose dual digital transistors manufactured by ROHM Semiconductor. The series is designed for applications requiring multiple switching elements in a minimal package size. The UMT6 package provides a standardized form factor compatible with automated surface-mount assembly processes.
Replacement Considerations
The datasheet indicates equivalence to the DTC143T transistor structure. Verify pinout compatibility and electrical specifications against alternative dual NPN digital transistors before substitution. Ensure that any replacement part meets the same voltage, current, and power dissipation ratings.
