UMH8NTR

UMH8NTR

$0.37
  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-

SKU:adaaec284454 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 1mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

Download product information

UMH8NTR

Overview

The UMH8NTR is a dual NPN digital transistor from ROHM Semiconductor, housed in a TUMT-6 surface-mount package. It features a collector-emitter voltage of 50 V and continuous collector current of 100 mA. The device includes an internal base resistor with a typical value of 4.7 kOhms and a resistance ratio of 10. Key electrical specifications include a minimum DC current gain (hfe) of 80 at 10 mA and 5 V, a maximum operating frequency of 250 MHz, and power dissipation of 150 mW. The emitter-base voltage is rated at 5 V.

Feature Summary

  • Integrates two NPN transistors with pre-bias resistors for simplified circuit design
  • Optimized for high-speed switching applications with a 250 MHz operating frequency
  • Compact SMD packaging suitable for automated surface-mount assembly processes

Applications

  • General-purpose signal switching circuits
  • Driver stages for logic interfaces
  • Power management control circuits

Procurement Notes

Verify the specific suffix and tape/reel configuration against the manufacturer's latest datasheet to ensure compatibility with automated placement equipment. Confirm RoHS compliance status and lead times directly with authorized distributors, as supply chain conditions may vary. Ensure storage conditions adhere to moisture sensitivity levels specified in the handling guidelines to prevent package damage during soldering.

Selection Notes

Select this component when a dual NPN configuration with integrated biasing is required to reduce external component count. The 50 V rating and 100 mA current capacity suit low-to-medium power switching tasks. Consider the TUMT-6 footprint for board space constraints. Compare input resistance values against other series members if specific drive current requirements differ from the standard 4.7 kOhm configuration.

Part Context

This part belongs to the UMH series of complex digital transistors manufactured by ROHM Semiconductor. These devices combine bipolar junction transistors with internal resistors to function as ready-to-use switching elements. The UMH8NTR specifically utilizes the TUMT-6 package, distinguishing it from other series members that may use SOT-353 or similar footprints while maintaining similar electrical performance characteristics.

Replacement Considerations

Direct substitutes within the same family include UMG8NTR, which shares identical electrical parameters but utilizes a different SOT-353-5 package. Verify pinout compatibility and thermal dissipation requirements before swapping packages. Other dual NPN digital transistors with matching 50V/100mA ratings may serve as functional alternatives if pin configurations align.

UMH8NTRUMH8NTR
$0.37
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