UMH9NTN

UMH9NTN

$0.40
  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-

SKU:c5fccda0417a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN PREBIAS 0.15W UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):10kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:68 @ 5mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:250MHz
  • Power - Max:150mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6

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UMH9NTN

Overview

The UMH9NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two independent NPN transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical base resistor of 10 kOhms and an emitter-base resistor of 47 kOhms, yielding a resistance ratio of 4.7. It operates with a maximum power dissipation of 150mW and supports a transition frequency up to 250MHz. The unit weight is approximately 7.5mg.

Feature Summary

  • Integrates dual NPN transistors with internal bias resistors to eliminate external components
  • Provides high-speed switching capability suitable for digital signal processing
  • Utilizes a low-profile SOT-363 package for efficient PCB space utilization

Applications

  • Digital logic level shifting and interface circuits
  • Signal buffering and inversion in microcontroller systems
  • General-purpose switching applications in portable electronics

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging configuration, such as cut tape or reel quantities. Confirm RoHS compliance status through official datasheets before integration. Cross-reference pinout diagrams with target PCB footprints to prevent mounting errors during assembly.

Selection Notes

Select this component when dual NPN switching with integrated biasing is required in a minimal footprint. Ensure the 50V voltage rating and 100mA current capacity align with load requirements. Consider the 10kOhm input resistance for drive current calculations and verify thermal management capabilities within the 150mW dissipation limit.

Part Context

This part belongs to the UMH9N series of pre-biased transistors from ROHM. It serves as a direct replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The SOT-363 package is standard for dual transistor arrays in consumer and industrial electronics.

Replacement Considerations

Equivalent parts include UMH9NFHATN for automotive-grade applications. Verify compatibility with alternative manufacturers' dual NPN digital transistors having identical pinouts and electrical ratings.

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