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The UMH9NTN is a dual NPN digital transistor manufactured by ROHM Semiconductor, housed in a compact SOT-363 (UMT6) surface-mount package. It integrates two independent NPN transistors with built-in bias resistors to simplify circuit design. Key electrical specifications include a collector-emitter voltage of 50V and a continuous collector current of 100mA. The device features a typical base resistor of 10 kOhms and an emitter-base resistor of 47 kOhms, yielding a resistance ratio of 4.7. It operates with a maximum power dissipation of 150mW and supports a transition frequency up to 250MHz. The unit weight is approximately 7.5mg.
Verify the specific ordering suffix to ensure correct packaging configuration, such as cut tape or reel quantities. Confirm RoHS compliance status through official datasheets before integration. Cross-reference pinout diagrams with target PCB footprints to prevent mounting errors during assembly.
Select this component when dual NPN switching with integrated biasing is required in a minimal footprint. Ensure the 50V voltage rating and 100mA current capacity align with load requirements. Consider the 10kOhm input resistance for drive current calculations and verify thermal management capabilities within the 150mW dissipation limit.
This part belongs to the UMH9N series of pre-biased transistors from ROHM. It serves as a direct replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The SOT-363 package is standard for dual transistor arrays in consumer and industrial electronics.
Equivalent parts include UMH9NFHATN for automotive-grade applications. Verify compatibility with alternative manufacturers' dual NPN digital transistors having identical pinouts and electrical ratings.