UMT1NFHATN

UMT1NFHATN

$0.33
  • Description:TRANS 2PNP DUAL 50V 150MA UMT6
  • Series:-

SKU:12eeb72b594b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:TRANS 2PNP DUAL 50V 150MA UMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:150mW
  • Frequency - Transition:140MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:UMT6
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

UMT1NFHATN

Overview

The UMT1NFHATN is a dual PNP digital transistor from ROHM Semiconductor, housed in an SOT-363 (UMT6) surface-mount package. It integrates two PNP transistors with built-in bias resistors for simplified circuit design. Key electrical parameters include a collector-emitter voltage of -50V and a continuous collector current of -0.15A per element. The device features a minimum DC current gain (hFE) of 120 at -1mA and -6V. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.

Feature Summary

  • Integrates dual PNP transistors with built-in bias resistors to reduce component count and board space.
  • Automotive-grade reliability certified under the AEC-Q101 standard for harsh environment operation.
  • Optimized for low-power applications with a maximum power dissipation of 150mW.

Applications

  • Signal switching and level shifting in automotive electronic control units.
  • Driver circuits for small loads in industrial automation systems.
  • Logic interface buffers in portable consumer electronics.

Procurement Notes

Verify the specific suffix 'TN' confirms the tape-and-reel packaging format required for automated assembly. Confirm that the AEC-Q101 qualification status meets the specific reliability class required by the target application. Ensure the ordering part number matches the exact polarity and resistance configuration specified in the design schematic.

Selection Notes

Select this component when a dual PNP configuration with integrated biasing is required in a compact SOT-363 footprint. Compare input resistance values against the driving source impedance to ensure proper logic threshold levels. Consider the -50V voltage rating and -0.15A current limit to verify compatibility with the load requirements.

Part Context

This part belongs to ROHM's UMT series of complex transistors designed for high-density mounting. The UMT1NFHATN specifically provides a dual PNP solution, serving as a compact alternative to discrete resistor-transistor networks. It shares the UMT6 package dimensions with other variants in the family, facilitating standardized PCB layout strategies.

Replacement Considerations

Publicly confirmed direct substitutes are not available in the provided documentation. Designers should evaluate equivalent dual PNP digital transistors in SOT-363 packages, ensuring matching voltage ratings, current capabilities, and pinout configurations before substitution.

UMT1NFHATNUMT1NFHATN
$0.33
Buy Now