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The UMT1NFHATN is a dual PNP digital transistor from ROHM Semiconductor, housed in an SOT-363 (UMT6) surface-mount package. It integrates two PNP transistors with built-in bias resistors for simplified circuit design. Key electrical parameters include a collector-emitter voltage of -50V and a continuous collector current of -0.15A per element. The device features a minimum DC current gain (hFE) of 120 at -1mA and -6V. It operates within a temperature range of -55°C to +150°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix 'TN' confirms the tape-and-reel packaging format required for automated assembly. Confirm that the AEC-Q101 qualification status meets the specific reliability class required by the target application. Ensure the ordering part number matches the exact polarity and resistance configuration specified in the design schematic.
Select this component when a dual PNP configuration with integrated biasing is required in a compact SOT-363 footprint. Compare input resistance values against the driving source impedance to ensure proper logic threshold levels. Consider the -50V voltage rating and -0.15A current limit to verify compatibility with the load requirements.
This part belongs to ROHM's UMT series of complex transistors designed for high-density mounting. The UMT1NFHATN specifically provides a dual PNP solution, serving as a compact alternative to discrete resistor-transistor networks. It shares the UMT6 package dimensions with other variants in the family, facilitating standardized PCB layout strategies.
Publicly confirmed direct substitutes are not available in the provided documentation. Designers should evaluate equivalent dual PNP digital transistors in SOT-363 packages, ensuring matching voltage ratings, current capabilities, and pinout configurations before substitution.