UMWIRF7807TR

$0.65

Description：MOSFET N-CH 30V 8.3A 8SOIC
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7f85f75874b3 Category: Single FETs, MOSFETs Brand: UMW

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Product introduction

UMWIRF7807TR is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 30V 8.3A 8SOIC. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for UMWIRF7807TR

Description：MOSFET N-CH 30V 8.3A 8SOIC
Series：*
Mfr：UMW
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for UMWIRF7807TR

UMWIRF7807TR

Single FETs, MOSFETs Overview

The UMW IRF7807TR is a single N-channel Power MOSFET in an SOP-8 package. It features a Drain-to-Source Voltage (VDS) of 30V and a continuous drain current (ID) of 11A at 25°C, dropping to 8.7A at 70°C. The static Drain-to-Source On-Resistance (RDS(on)) is typically 13.8mΩ at VGS=10V and 18.2mΩ at VGS=4.5V. Total Gate Charge (Qg) is typically 7.2nC. The device supports a maximum power dissipation of 2.5W at 25°C with a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Optimized for low on-resistance to minimize conduction losses in high-efficiency switching applications.
Enhanced gate charge characteristics facilitate fast switching speeds and reduced dynamic power loss.
Robust avalanche energy rating ensures reliability under inductive load switching conditions.

Single FETs, MOSFETs Applications

Control FET for Notebook Processor Power
Synchronous Rectifier MOSFET for Graphics Cards
Point-of-Load (POL) Converters in Networking and Telecommunication Systems

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation, as the model number corresponds to a legacy Infineon part. Confirm that the UMW version meets the exact electrical specifications required by your design, particularly regarding RDS(on) tolerances and thermal performance. Ensure the SOP-8 package dimensions align with your PCB footprint requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 30V N-channel MOSFET with low on-resistance. Consider the thermal derating curve when determining current capacity at elevated ambient temperatures. Verify that the gate drive voltage supports the specified RDS(on) levels, especially if operating at VGS=4.5V for logic-level control.

Single FETs, MOSFETs Part Context

This component belongs to the class of surface-mount power MOSFETs designed for DC-DC conversion and motor control. The SOP-8 package provides a compact solution for space-constrained designs while offering adequate thermal dissipation through the exposed drain pad. It serves as a direct replacement for similar 30V, ~15mΩ devices in consumer electronics and industrial power supplies.