UMX18NTN

Overview

The UMX18NTN is a dual NPN bipolar junction transistor array manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage (VCEO) of 12 V and a continuous collector current (IC) of 500 mA. The device has a power dissipation rating of 150 mW and a transition frequency (fT) of 320 MHz. DC current gain (hFE) is specified at a minimum of 270 when measured at IC = 10 mA and VCE = 2 V. The saturation voltage (VCE(sat)) is typically 250 mV at IC = 200 mA and IB = 10 mA. It operates within a junction temperature range up to +150°C and is housed in a UMT6 (SOT-363/SC-88) surface-mount package.

Feature Summary

• Dual independent NPN transistors integrated into a single compact surface-mount package for space-constrained designs.
• High-speed switching capability supported by a 320 MHz transition frequency suitable for RF and high-frequency applications.
• Low saturation voltage ensures efficient power handling with minimal heat generation during conduction states.

Applications

• High-speed digital signal switching and logic level translation circuits.
• RF amplifier stages requiring low noise and high transition frequency performance.
• Buffer and driver circuits in portable consumer electronics and mobile devices.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration, such as tape and reel or cut tape quantities. Confirm that the component meets RoHS3 compliance requirements if mandated by the end-product regulations. Cross-reference the part marking code on the physical device with the datasheet to authenticate the source and prevent counterfeit components from entering the supply chain.

Selection Notes

Select this component when a dual NPN configuration is required with a 12 V voltage rating and high current capacity up to 500 mA. The 320 MHz fT makes it appropriate for applications exceeding standard small-signal transistor bandwidths. Ensure the PCB layout accommodates the UMT6 footprint and that thermal management strategies account for the 150 mW power dissipation limit under worst-case operating conditions.

Part Context

This device belongs to the UMX18 series of dual NPN transistor arrays produced by ROHM Semiconductor. It shares the UMT6 package form factor with other variants in the family but is distinguished by its specific 12 V breakdown voltage and 500 mA current rating profile. The series is designed to replace discrete dual-transistor solutions in modern miniaturized electronic assemblies.

Replacement Considerations

Direct pin-compatible substitutes may include other dual NPN arrays in the UMT6 package with matching 12 V and 500 mA ratings. Verify that alternative parts meet the 320 MHz transition frequency requirement and similar hFE characteristics to maintain circuit performance without redesigning the schematic or layout.