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The UMX1NTN is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It integrates two independent NPN transistors within a compact SOT-363 (UMT6) surface-mount package. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. Key electrical specifications include a DC current gain (hFE) ranging from 120 to 560 at 1 mA, a transition frequency (fT) of 180 MHz, and a maximum power dissipation (Pd) of 150 mW. The saturation voltage is specified at 400 mV under standard test conditions, with a maximum operating junction temperature of +150°C.
Verify the specific ordering suffix when sourcing components, as variations may exist regarding tape-and-reel specifications or RoHS compliance status. Confirm that the received package matches the SOT-363/UMT6 footprint dimensions required by the design. Ensure the supplier provides valid datasheets corresponding to the exact part number variant to guarantee parameter consistency.
Select this component for designs requiring dual NPN functionality in a minimal footprint where independent operation is critical. Compare the 150 mA current limit and 150 mW power dissipation against circuit load requirements. Consider the 180 MHz transition frequency for high-speed switching applications. Evaluate thermal management needs given the small package size and power constraints.
This component belongs to the UMX1N series of general-purpose dual transistors from ROHM. It serves as a compact alternative to discrete single transistors, offering reduced board space. The series typically includes complementary PNP variants and other configurations within similar packaging standards for flexible design integration.
Direct pin-compatible substitutes within the same family include the UMX2NTN (Dual PNP) and UMX3NTN (Complementary NPN+PNP). Verify internal resistor values if replacing with pre-biased digital transistor variants like the UMH series, as functional differences exist.