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The UMZ1NTR is a general-purpose complementary dual transistor array manufactured by ROHM Semiconductor. It integrates one NPN and one PNP epitaxial planar silicon transistor within a single UMT6 (SOT-363) surface-mount package. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per element. Key electrical characteristics include a transition frequency of 180MHz for the NPN side and 140MHz for the PNP side, with a maximum power dissipation of 150mW. The transistors operate independently to prevent interference, featuring a minimum DC current gain of 120 at specified test conditions.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability and long-term reliability during PCB assembly processes.
Select this component when space-constrained designs require matched complementary transistor pairs. Verify that the 50V breakdown voltage and 150mA current limits satisfy circuit demands. Consider the UMT6 package dimensions against available board real estate and thermal dissipation capabilities of the target application environment.
This part belongs to the UMZ series of general-purpose dual transistors from ROHM. It serves as a direct replacement for discrete NPN/PNP pairs in logic and amplifier stages. The UMT6 package offers significant area reduction compared to individual components, facilitating miniaturization in consumer electronics and industrial control modules.
PUMZ2,115 and PUMZ2,125 from Nexperia are documented direct substitutes.