SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UMZ2NTR is a dual bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor, featuring one NPN and one PNP transistor within a UMT6 surface-mount package. It supports a maximum collector current of 150 mA and a collector-emitter voltage of 50 V. The device exhibits transition frequencies of 180 MHz for the NPN section and 140 MHz for the PNP section. DC current gain ranges from a minimum of 120 to a maximum of 560. Power dissipation is rated at 150 mW, with saturation voltages of 400 mV and 500 mV under specified conditions. The component operates up to a junction temperature of +150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS3 compliance status prior to integration. Check datasheet revisions for parameter updates. Ensure storage conditions maintain moisture sensitivity level 1 integrity. Validate pinout alignment with PCB footprint specifications during assembly planning.
Select this component when a matched NPN/PNP pair is required in minimal space. Consider the 150 mA current limit and 50 V voltage rating against circuit demands. Evaluate thermal management needs given the 150 mW power dissipation constraint. Compare transition frequencies against signal bandwidth requirements for both transistor sections.
This part belongs to the UMZ2NT series of dual BJT arrays. It shares the UMT6 package form factor with related variants like UMX2NTR, which contains two NPN transistors instead of complementary types. The series targets space-constrained designs needing paired transistor functionality without discrete component mismatch issues.
PUMZ2,115 and PUMZ2,125 from Nexperia are documented direct replacements. Verify electrical parameter compatibility before substitution. Confirm package pinout equivalence to ensure mechanical fit.