UP0111300L

Overview

The UP01113 is a composite PNP transistor array featuring two elements within one package. It integrates built-in resistors to reduce mounting area and assembly costs. The device operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA per element. Total power dissipation is rated at 125 mW. Transition frequency reaches 80 MHz, while input resistance is nominally 47 kΩ. The component utilizes the SSMini5-F2 surface mount package.

Feature Summary

• Two PNP transistors incorporated into a single package
• Built-in base resistors for simplified circuit design
• Reduces mounting area and assembly cost by half

Applications

• Digital circuits
• General electronic equipment
• Office equipment
• Communications equipment

Procurement Notes

Verify the specific lifecycle status before procurement as maintenance or discontinued classifications apply. Confirm RoHS compliance requirements against EU Directive 2002/95/EC standards. Ensure the latest product specifications are obtained directly from the manufacturer prior to final purchasing decisions.

Selection Notes

Select this component when space reduction is critical due to its dual-element integration. Verify that the -50 V collector-emitter breakdown voltage meets system requirements. Ensure the total power dissipation limit of 125 mW accommodates thermal constraints in the target application environment.

Part Context

This part belongs to Panasonic's composite transistor series designed for digital applications. It replaces discrete components by integrating two transistors with biasing resistors. The internal connection scheme defines pin assignments for base, emitter, and collector terminals across both elements.

Replacement Considerations

The UNR1113 × 2 configuration serves as the basic equivalent part number reference.