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The Panasonic UP01213 is a composite transistor device containing two NPN epitaxial planar transistors with built-in bias resistors in an SSMini5-F2 package. It operates with a collector-emitter voltage of 50 V and a maximum collector current of 100 mA per element. The total power dissipation is rated at 125 mW. Electrical characteristics include a forward current transfer ratio (hFE) minimum of 80 at IC = 5 mA, and a transition frequency (fT) of 150 MHz. Internal resistors R1 and R2 are nominally 47 kΩ each.
Verify the specific lifecycle status directly with Panasonic Industry before procurement, as the component falls under maintenance or discontinued categories. Confirm that the latest Product Standards match design requirements, as specifications may change without notice. Ensure compliance with RoHS directives and verify handling instructions for damp-proof packing if applicable.
Select this component for applications requiring dual NPN switching with integrated base biasing in a minimal footprint. Verify that the 125 mW total power dissipation and 50 V voltage ratings accommodate the circuit's peak transient conditions. Consider the 47 kΩ internal resistor values for base drive calculations and ensure the operating temperature range fits within -55°C to +125°C storage limits.
The UP01213 belongs to the UP series of composite transistors from Panasonic Industry. These devices combine discrete transistor elements with precision bias resistors to simplify digital logic interface designs. The SSMini5-F2 package provides a small form factor suitable for space-constrained printed circuit board layouts.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Panasonic Industry sales staff for equivalent components or updated product standards.