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The UP01213G0L is a composite transistor device manufactured by Panasonic Industry, incorporating two NPN pre-biased transistors into a single SSMini5-F3 package. It operates with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA per element. The total power dissipation is rated at 125mW at 25°C ambient temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at IC=5mA and VCE=10V, a transition frequency (fT) of 150MHz, and a collector-emitter saturation voltage of 0.25V max at IC=10mA and IB=0.3mA. Internal bias resistors are configured with R1 at 47kΩ and R2 at 47kΩ.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging type and compliance status. Confirm availability status as the product lifecycle may indicate maintenance or discontinuation phases. Ensure the source document matches the exact part number configuration before finalizing procurement decisions.
Select this component when space-constrained designs require dual NPN switching functions with integrated biasing. Verify that the 50V voltage rating and 100mA current capacity meet the specific load requirements. Consider the SSMini5-F3 package dimensions for PCB layout compatibility and thermal dissipation needs relative to the 125mW power rating.
The UP01213G belongs to the UP0121 series of composite transistors from Panasonic Industry. This series consolidates discrete transistor pairs with fixed resistor networks into small surface-mount packages. The UP01213G specifically utilizes an NPN-NPN configuration with identical 47kΩ bias resistors for both elements, distinguishing it from other variants in the family that may offer different resistance ratios or configurations.
Publicly confirmed substitute part numbers for the UP01213G0L were not found in the provided verified source material. Cross-referencing with similar NPN pre-biased dual transistors requires independent verification of pinout and electrical parameters.