UP0121MG0L

Overview

The UP0121MG0L is a silicon NPN epitaxial planar composite transistor designed for switching and digital circuits. It integrates two emitter-coupled transistors with built-in resistors into a single SSMini5-F3 surface-mount package. Key electrical parameters include a collector-emitter voltage of 50V, a maximum collector current of 100mA, and a total power dissipation of 125mW at 25°C. The device features an input resistance (R1) of 2.2kΩ and an internal resistor ratio (R1/R2) of 0.047. It achieves a transition frequency (fT) of 150MHz and maintains a DC current gain (hFE) of at least 80 at 5mA.

Feature Summary

• Integrates two NPN transistors with built-in base and emitter resistors in a single package to reduce mounting area and assembly costs.

Applications

• Switching circuits
• Digital circuits

Procurement Notes

Verify the component lifecycle status before procurement as this part may be discontinued or subject to maintenance plans. Confirm that the SSMini5-F3 package dimensions align with the target PCB layout. Ensure design compliance with absolute maximum ratings, particularly regarding junction temperature limits and transient power conditions during operation.

Selection Notes

Select this component when space-constrained designs require dual NPN switching elements with integrated biasing resistors. Verify that the 50V breakdown voltage and 100mA current capacity meet circuit requirements. Consider the 150MHz transition frequency for high-speed digital applications. Check if the specific internal resistor values match the required logic interface levels.

Part Context

This component belongs to the UP0121MG series of composite transistors manufactured by Panasonic Industry. It utilizes the SSMini5-F3 package code, which is a compact surface-mount form factor designed for automated assembly. The product complies with the RoHS Directive (EU 2002/95/EC).

Replacement Considerations

RN1705JE(TE85L,F)