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The UP04111G is a composite transistor featuring two PNP elements integrated into a single SSMini6-F2 package. Designed for switching and digital circuits, it incorporates built-in resistors to reduce mounting area and assembly costs. The device operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. It includes an input resistance (R1) of 10 kΩ and a resistance ratio (R1/R2) of 1.0. The transition frequency is rated at 80 MHz, with a total power dissipation of 125 mW at 25°C ambient temperature.
Verify the current lifecycle status before procurement, as this component may be classified under maintenance or discontinued categories. Consult official Panasonic Industry channels for the most up-to-date availability information and confirm that the SSMini6-F2 package dimensions align with existing PCB footprints during design validation.
Select this component when space constraints require integrating dual PNP transistors with fixed bias networks. Ensure the circuit design accommodates the -50 V collector-emitter voltage rating and -100 mA current limit. Verify that the 10 kΩ internal resistor values meet the specific base drive requirements of the target application without external modification.
This part belongs to the UP0411 series of composite transistors manufactured by Panasonic Electronic Components. These devices are silicon PNP epitaxial planar types designed specifically to simplify circuit layouts in consumer electronics and general-purpose equipment by combining active components and passive resistive elements.
The UNR2111 is listed as a basic equivalent part number. Verify pinout compatibility and electrical characteristics against the UP04111G datasheet before substitution.