UP04112G0L

Overview

The UP04112G is a composite transistor device manufactured by Panasonic Electronic Components, designed for digital circuits. It integrates two PNP silicon epitaxial planar transistors into a single SSMini6-F2 package, each equipped with built-in bias resistors. The component supports a maximum collector current of -100 mA and withstands collector-emitter voltages up to -50 V. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 60 at -5 mA and a transition frequency of 80 MHz. The internal circuitry utilizes two 22 kΩ resistors per element, facilitating compact board layouts.

Feature Summary

• Integrates two separate PNP transistors with built-in bias resistors within a single surface-mount package.
• Utilizes the SSMini6-F2 form factor to reduce mounting area and assembly costs compared to discrete components.
• Designed specifically for high-speed switching applications in digital logic circuits.

Applications

• Digital logic interface circuits
• Switching applications requiring integrated bias networks
• General-purpose electronic equipment

Procurement Notes

Verify the specific lifecycle status before procurement, as the datasheet indicates maintenance or discontinuation stages may apply. Confirm that the SSMini6-F2 package dimensions align with existing PCB footprints. Ensure design parameters remain within the absolute maximum ratings to prevent device failure during operation.

Selection Notes

Select this component when space constraints require combining multiple discrete transistors and resistors into one footprint. The built-in 22 kΩ resistors simplify base drive calculations. Verify that the required switching speed does not exceed the 80 MHz transition frequency limit under the intended operating conditions.

Part Context

This part belongs to the UP041xxG series of composite transistors from Panasonic. These devices are engineered to replace multiple discrete components, thereby reducing board space and simplifying assembly processes. The UP04112G specifically features PNP elements, distinguishing it from NPN variants within the same product family.

Replacement Considerations

The datasheet identifies UNR2112 as the basic part number equivalent. Designers should verify pin compatibility and electrical specifications against other composite transistor models if sourcing alternatives.

FAQ

What is the resistance value of the built-in resistors?

Each transistor element contains two built-in resistors, R1 and R2, both with a nominal value of 22 kΩ.

What is the maximum total power dissipation?

The total power dissipation (PT) is rated at 125 mW at an ambient temperature of 25°C.

How are the pins arranged in the SSMini6-F2 package?

Pin 1 is Emitter (Tr1), Pin 2 is Base (Tr1), Pin 3 is Collector (Tr2), Pin 4 is Emitter (Tr2), Pin 5 is Base (Tr2), and Pin 6 is Collector (Tr1).