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The UP0411MG is a silicon PNP epitaxial planar composite transistor designed for digital circuits. It integrates two elements into one SSMini6-F2 package, featuring built-in bias resistors with a ratio of 0.047. Key electrical parameters include a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -100 mA. The device has a total power dissipation rating of 125 mW at 25°C ambient temperature. It exhibits a transition frequency (fT) of 80 MHz and a minimum forward current transfer ratio (hFE) of 80.
Verify the current lifecycle status on the Panasonic semiconductor website before procurement, as this component may be subject to maintenance or discontinuation plans. Confirm RoHS compliance documentation matches specific project requirements. Ensure the SSMini6-F2 package dimensions align with the target PCB layout constraints during the design phase.
Select this component when space-saving integration of dual PNP switching functions is required. Verify that the -50 V voltage rating and -100 mA current capacity meet circuit demands. Consider the 125 mW power dissipation limit and ensure adequate thermal management within the system design to maintain operation within the specified junction temperature range.
This part belongs to the UP series of composite transistors manufactured by Panasonic Electronic Components. These devices are engineered to replace multiple discrete components in digital logic applications, offering a standardized solution for signal processing and switching tasks in consumer and industrial electronics.
The datasheet identifies UNR211M as the basic part number equivalent. Verify pinout compatibility and electrical characteristics against the UNR211M specification before substitution.
The resistance ratio (R1 / R2) is 0.047.
The marking symbol is EA.
The input resistance R1 is 2.2 kΩ with a tolerance of ±30%.