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The UP04210G0L is a composite transistor array manufactured by Panasonic Electronic Components, featuring two NPN silicon epitaxial planar transistors integrated into a single SSMini6-F2 package. Designed for switching and digital circuits, it incorporates built-in base resistors to reduce mounting area and assembly costs. Key electrical specifications include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (PT) of 125 mW at 25°C. The device exhibits a transition frequency (fT) of 150 MHz and a typical forward current transfer ratio (hFE) of 460 at IC = 5 mA.
Verify the specific ordering suffix against official documentation, as suffixes may indicate variations in packaging or tape-and-reel quantities. Confirm the current lifecycle status directly with Panasonic Electronic Components, as this component is listed under maintenance or discontinued categories. Ensure compliance with RoHS directives applicable to your region before finalizing procurement plans.
Select this component when a dual NPN configuration with integrated biasing is required for space-constrained designs. Verify that the 50 V collector-emitter voltage rating meets the circuit's maximum operating conditions. Consider the 125 mW total power dissipation limit and ensure adequate thermal management within the SSMini6-F2 package dimensions for the intended ambient temperature range.
This part belongs to the UP04210G series of composite transistors from Panasonic Electronic Components. It utilizes a silicon NPN epitaxial planar technology optimized for digital switching performance. The internal connection diagram confirms two independent NPN transistors, each paired with a 47 kΩ base resistor, housed in a leadless surface-mount package.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or contact technical support for verified cross-reference data.