UP04214G0L

Overview

The UP04214G0L is a dual NPN pre-biased transistor array in an SSMini6-F2 package. It integrates two transistors with built-in resistors (R1=10kΩ, R2=47kΩ) for switching and digital circuits. Key electrical parameters include a collector-emitter voltage of 50V, collector current of 100mA, total power dissipation of 125mW, transition frequency of 150MHz, and DC current gain of 80 at IC=5mA.

Feature Summary

• Dual elements incorporated into one package to reduce mounting area and assembly cost by half.

Applications

• Switching circuits
• Digital circuits

Procurement Notes

Verify the component lifecycle status as Maintenance/Discontinued before finalizing designs. Confirm that the SSMini6-F2 package dimensions and pinout match the target PCB footprint. Ensure compliance with RoHS Directive requirements if applicable to the end product specifications.

Selection Notes

Select this component when space-saving dual NPN configurations are required. The integrated base and emitter resistors simplify circuit design compared to discrete components. Verify that the 100mA current rating and 125mW power dissipation meet the specific load requirements of the application.

Part Context

This part belongs to the UP04214G series of silicon NPN epitaxial planar composite transistors manufactured by Panasonic Industry. It is designed specifically for applications requiring compact, cost-effective solutions for standard electronic equipment such as office and communication devices.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts and electrical characteristics carefully when evaluating alternative components from other manufacturers.

FAQ

What are the internal resistor values?

The internal resistors are R1 = 10 kΩ and R2 = 47 kΩ.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is 50 V.

What is the transition frequency?

The transition frequency (fT) is 150 MHz.