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The UP04215G0L is a composite transistor featuring two silicon NPN epitaxial planar elements integrated into a single SSMini6-F2 package. Designed for switching and digital circuits, it incorporates built-in base resistors to reduce mounting area and assembly costs. Key electrical characteristics include a collector-emitter voltage of 50V, a maximum collector current of 100mA, and a total power dissipation of 125mW at 25°C. The device exhibits a transition frequency of 150MHz and a typical DC current gain (hFE) of 460 at 5mA. It complies with the RoHS Directive and operates within a junction temperature range up to 125°C.
Verify component authenticity through authorized Panasonic Industry channels or certified distributors. Confirm that the delivered parts match the SSMini6-F2 package and marking symbol '8T'. Ensure storage conditions adhere to damp-proof packing requirements to prevent characteristic changes due to external factors before use.
Select this component when space constraints require dual NPN switching elements with integrated biasing. Verify that the 50V collector-emitter voltage and 100mA current limits meet the specific circuit demands. Consider the 125mW power dissipation capability relative to the expected ambient operating temperature to ensure safe junction temperatures are maintained.
This part belongs to the UP04215G series of composite transistors manufactured by Panasonic Industry. It utilizes the SSMini6-F2 surface mount package, which provides a compact footprint suitable for high-density PCB layouts. The internal configuration connects two NPN transistors, each with an associated 10kΩ resistor, sharing a common collector pin arrangement.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Panasonic Industry sales staff for alternative components if this part is discontinued or unavailable.