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The UP04216L is a composite transistor from the Panasonic UP0421x series, featuring an NPN epitaxial planar silicon transistor integrated with a 4.7 kΩ base resistor in a single SSMini6-F1 package. It provides a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. The device dissipates up to 125 mW at 25°C ambient temperature, with a junction temperature limit of 125°C. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = 5 mA, and a collector-emitter saturation voltage (VCE(sat)) of 0.25 V max at IC = 10 mA.
Verify component authenticity through authorized distribution channels. Confirm that the specific part number matches the required resistance value and package type for your design. Check official manufacturer lifecycle status before finalizing procurement plans.
Select this component when space constraints require combining a transistor and a base resistor. Ensure the circuit operates within the 125 mW total power dissipation limit and does not exceed the 50 V collector-emitter voltage rating under any operating condition.
This component belongs to the UP0421x series of composite transistors manufactured by Panasonic Electronic Components. The series includes variants with different internal resistance values, such as 10 kΩ and 47 kΩ, all sharing the same SSMini6-F1 surface-mount package and core electrical specifications.
Direct replacements must match the SSMini6-F1 package and provide a 4.7 kΩ base resistor. Verify that alternative components meet the 50 V VCEO and 100 mA IC requirements to ensure compatibility with existing circuit designs.